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Article Dans Une Revue Journal of Applied Spectroscopy Année : 2024

Strained silicon technology: Non-destructive nanoscale characterization through Tip-enhanced Raman Spectroscopy

Résumé

The semiconductor industry is undergoing a transformative phase, marked by the relentless drive for miniaturisation and constant demand for higher performance and energy efficiency. However, the reduction of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) sizes for advanced technology nodes below 10 nm presents several challenges. In response, strained silicon technology has emerged as a key player, exploiting strain induction in the silicon crystal lattice to improve device performance. At the same time, there has been a growing need for characterization techniques that allow in-line monitoring of sample conditions during semiconductor manufacturing, as an alternative to traditional methods such as Transmission Electron Microscopy (TEM) or High Resolution X-Ray Diffraction (HRXRD), which have several limitations in terms of measurement time and sample destructiveness. This paper explores the application of advanced spectroscopic characterization techniques, in particular μ-Raman spectroscopy and TipEnhanced Raman Spectroscopy (TERS), to meet the evolving needs of the semiconductor industry for quality control and failure analysis, increasingly requiring faster and non-destructive characterization techniques. μ-Raman provides insight into strain values and distributions
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Dates et versions

cea-04601717 , version 1 (05-06-2024)

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Citer

Giancarlo La Penna, Chiara Mancini, Anacleto Proietti, Luca Buccini, Daniele Passeri, et al.. Strained silicon technology: Non-destructive nanoscale characterization through Tip-enhanced Raman Spectroscopy. Journal of Applied Spectroscopy, 2024, pp.10.1177/00037028241246292. ⟨10.1177/00037028241246292⟩. ⟨cea-04601717⟩
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